Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

标题
Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 38, Issue 1, Pages 130-133
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-11-11
DOI
10.1109/led.2016.2627538

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