Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents

标题
Reconfigurable Black Phosphorus Vertical Tunneling Field-Effect Transistor With Record High ON-Currents
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 981-984
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2019-04-04
DOI
10.1109/led.2019.2909176

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