期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 3, 页码 1046-1053出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2233742
关键词
AlGaN channel high-electron mobility transistor (HEMT); breakdown voltage; high frequency; high power; information-communication; power electronics
资金
- New Energy and Industrial Technology Development Organization (NEDO)
Enhanced performance of RF power modules is required in a next-generation information society. To satisfy these requirements, we designed a novel high-electron mobility transistor (HEMT) structure employing wider bandgap AlGaN for a channel layer, which we called AlGaN channel HEMT, and investigated it. The wider bandgap is more effective for higher voltage operation of HEMTs and contributes to the increase of output power in RF power modules. As a result, fabricated AlGaN channel HEMTs had much higher breakdown voltages than those of conventional GaN channel HEMTs with good pinchoff operation and sufficiently high drain current density without noticeable current collapse. Furthermore, specific ON-state resistances of fabricated AlGaN channel HEMTs were competitive with the best values of reported GaN- and SiC-based devices with similar breakdown voltages. These results indicate that the proposed AlGaN channel HEMTs are very promising not only for an information-communication society but also in the power electronics field.
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