The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters

标题
The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters
作者
关键词
Cd impurities in (PVP–TeO, 2, ) interlayer, I–V and C/G-f, A comparison of Al/p-Si (MS) and Al/(PVP–TeO, 2, : Cd)/p-Si (MPS) SBDs, Electrical and dielectric characteristics
出版物
PHYSICA B-CONDENSED MATTER
Volume 604, Issue -, Pages 412617
出版商
Elsevier BV
发表日期
2020-11-27
DOI
10.1016/j.physb.2020.412617

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