Article
Physics, Condensed Matter
Gourab Bhattacharya, N. Vijay Prakash Chaudhary, Tapasendra Adhikary, Shampa Aich, A. Venimadhav
Summary: This study investigated electron transport across Galfenol and Nickel-based Schottky contacts on n-Si substrates through DC current-voltage measurements and AC Impedance spectroscopy. Improper back contact can cause additional bias dependent Resistance-capacitance components, which were studied using proper equivalent circuit models. The results showed distinct behavior in capacitance and barrier height, with negative capacitance observed in certain conditions. The use of an equivalent circuit with inductor-resistor relaxation provided a better fit for the experimental results.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Materials Science, Multidisciplinary
Abdullah G. G. Al-Sehemi, A. Tataroglu, Abdulkerim Karabulut, Aysegul Dere, Ahmed A. A. Al-Ghamdi, F. Yakuphanoglu
Summary: Al/ZnO/p-Si diodes with different doping concentrations of a boric acid-doped ZnO interlayer were fabricated. The boric acid-doped ZnO films were obtained using the sol-gel method and spin-coating technique. The diodes exhibited photovoltaic behavior under both dark and illumination conditions, with the diode with 5 wt.% H3BO3-doped ZnO interlayer showing the best diode properties. The diodes also exhibited photodiode and photocapacitor behavior, and their capacitance and conductance measurements indicated their potential use in optoelectronic technologies.
Article
Materials Science, Multidisciplinary
E. Erdogan, M. Yilmaz, S. Aydogan, U. Incekara, Y. Sahin
Summary: In this study, a metal-semiconductor contact with an organic interlayer was fabricated, and the electrical parameters of the device were extracted using different methods. The results show that the interface cannot conduct AC signals at sufficiently high frequencies.
Article
Physics, Applied
Hajime Okumoto, Tetsuo Tsutsui
Summary: The study demonstrates that self-heating of devices is a source of negative capacitance in organic light-emitting diodes and hole-only devices. The principal mechanism of negative capacitance is the nonlinear coupling of the real and imaginary parts of admittance caused by AC temperature modulation. External heating induced negative capacitance, reflecting the heat transfer characteristics of the devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
S. A. Al-Ghamdi, Taymour A. Hamdalla, E. F. M. El-Zaidia, Ahmed Obaid M. Alzahrani, Nawal Alghamdi, Syed Khasim, I. S. Yahia, A. A. A. Darwish
Summary: Phthalocyanines are promising materials with unique properties, and the GaClPc/n-Si HJ has been studied for its structural and electronic characteristics, showing potential for applications in photodiode devices.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Multidisciplinary Sciences
Andac Batur Colak, Tamer Guzel, Anum Shafiq, Kamsing Nonlaopon
Summary: This paper presents a new model that represents the symmetric connection between capacitance-voltage and Schottky diode. An artificial neural network structure is used to predict the capacitance voltage characteristics of the Schottky diode with organic polymer edge, and the effect of neuron numbers on prediction accuracy is evaluated.
Article
Physics, Applied
Jinyang Liu, Zhao Han, Lei Ren, Xiao Yang, Guangwei Xu, Weibing Hao, Xiaolong Zhao, Shu Yang, Di Lu, Yuncheng Han, Xiaohu Hou, Shibing Long
Summary: This study systematically investigates the degradation mechanism of beta-Ga2O3 Schottky barrier diodes (SBDs) under high fluence neutron irradiation and explores a possible design roadmap. It reveals that the capture reaction of neutrons and Ga elements leads to serious performance degradation, while high-temperature oxygen annealing process can restore the device performance.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Min Zhu, Yuan Ren, Leidang Zhou, Jiaxiang Chen, Haowen Guo, Liqi Zhu, Baile Chen, Liang Chen, Xing Lu, Xinbo Zou
Summary: The study explicitly investigated the temperature-dependent electrical characteristics of a neutron-irradiated GaN SBD, revealing a decrease in electron concentration and Schottky barrier height inhomogeneity due to neutron irradiation. Although a new deep-level trap was identified, the results specified the outstanding resistance to neutron irradiation and robustness in extreme operation temperatures of the GaN SBD.
MICROELECTRONICS RELIABILITY
(2021)
Article
Materials Science, Multidisciplinary
Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton, Peter Horvath
Summary: The passage discusses the use of Mercury probe Schottky capacitance-voltage for carrier density and resistivity profiling in silicon epitaxial layers, highlighting the importance of silicon surface preparation for high-quality CV measurements. Various methods for treating silicon surfaces are currently being used, with the treatment process being a limiting factor for measurement time and quality. Evaluations have been made on typical treatments for P-type Epitaxial silicon surfaces, as well as a novel concept involving a pretreatment chamber called PTC.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Physical
Ali Riza Deniz
Summary: In this study, lead oxide (PbO2) was used as an interface material in Schottky diode applications, and its morphological properties were analyzed. Reference diode and PbO2/n-Si heterojunctions were fabricated and the parameters were calculated. The experiment showed that the diode parameters were strongly temperature-dependent, and the diode capacitance decreased with increasing frequency.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Kjetil Karlsen Saxegaard, Eduard Monakhov, Lasse Vines, Kristin Bergum
Summary: ZnOxNy thin films with high mobilities and tunable properties have been studied for their potential use as n-type absorbers in silicon-based tandem solar cells. The O:N ratio affects the structural, optical, and electrical properties of the films, as well as the electrical behavior of the ZnOxNy-Si pn heterojunction diodes. The films exhibit a Zn3N2-like structure or ZnO-like grains with structural disorder, and their optical band gap increases from 1.1 to 1.9 eV with increasing O:N ratio. The free electron concentration and Hall mobility of the films vary with the O:N ratio, reaching up to 1.5 x 1016 cm-3 and 88 cm2/Vs, respectively. The pn heterojunction diodes formed between ZnOxNy films and p-Si show current rectification of 3.7 orders of magnitude, but the extracted built-in voltage is higher than expected, suggesting the influence of defects on the electrical characteristics.
Article
Engineering, Electrical & Electronic
Ali Riza Deniz
Summary: This study investigated the effect of V2O5 material on electrical properties of Schottky diodes, and found that V2O5 material can improve the electrical performance of the diode. The diode parameters vary significantly with temperature, which is attributed to the inhomogeneous distribution in the potential barrier.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Zhuoran Han, Can Bayram
Summary: Diamond p-type lateral Schottky barrier diodes with and without Al2O3 field plates are studied, showing stable leakage current density, high rectifying ratio, and high breakdown voltage.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Kahtan Adnan Hussain, Ghusoon M. Ali, Aimen Boubaker, Adel Kalboussi
Summary: Planar organic Schottky diodes were fabricated using undoped pentacene as an active layer with both palladium and aluminum as contacts. The pentacene films exhibited various orientations as observed through X-ray diffraction measurements. The diode parameters were analyzed using thermionic emission theory, showing a decreasing ideality factor and increasing barrier height with increasing temperature. The device deposited on the n-Si <111> substrate showed larger forward and lower reverse currents than the n-Si <100> substrate device.
Article
Engineering, Electrical & Electronic
Feng Zhou, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Tinggang Zhu, Hai Lu
Summary: A quasi-vertical GaN junction barrier Schottky diode on low-cost sapphire substrate was successfully demonstrated, exhibiting excellent performance attributes such as low reverse leakage, high breakdown voltage, and fast switching capability. Improved heat dissipation techniques enable the diode to achieve high current rectification levels, high power efficiency, and low case temperatures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Sujoy Ghosh, Milinda Wasala, Nihar R. Pradhan, Daniel Rhodes, Prasanna D. Patil, Michael Fralaide, Yan Xin, Stephen A. McGill, Luis Balicas, Saikat Talapatra
Article
Computer Science, Information Systems
Jacob D. Huffstutler, Milinda Wasala, Julianna Richie, John Barron, Andrew Winchester, Sujoy Ghosh, Chao Yang, Weiyu Xu, Li Song, Swastik Kar, Saikat Talapatra
Article
Chemistry, Physical
Habib M. N. Ahmad, Sujoy Ghosh, Gaurab Dutta, Alec G. Maddaus, John G. Tsavalas, Shawna Hollen, Edward Song
JOURNAL OF PHYSICAL CHEMISTRY C
(2019)
Article
Computer Science, Information Systems
Prasanna D. Patil, Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, Saikat Talapatra
Article
Chemistry, Multidisciplinary
Prasanna D. Patil, Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, Arindam Ghosh, Saikat Talapatra
Article
Physics, Condensed Matter
Jeetendra Kumar Tiwari, Harish Chandr Chauhan, Birendra Kumar, Subhasis Ghosh
JOURNAL OF PHYSICS-CONDENSED MATTER
(2020)
Article
Materials Science, Multidisciplinary
Milinda Wasala, Prasanna D. Patil, Sujoy Ghosh, Rana Alkhaldi, Lincoln Weber, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, Saikat Talapatra
Article
Materials Science, Multidisciplinary
Prasanna D. Patil, Milinda Wasala, Sujoy Ghosh, Sidong Lei, Saikat Talapatra
Summary: The broadband photoconductive behavior of two-dimensional layered materials is crucial for various opto-electronic applications. Photocurrent spectroscopy measurements on few-layer indium selenide flakes were conducted to estimate the band gap energies of InSe at different temperatures. The Debye temperatures were estimated by analyzing the experimental variation of the band gap energy with temperature using theoretical models.
EMERGENT MATERIALS
(2021)
Article
Physics, Multidisciplinary
Harish Chandr Chauhan, Birendra Kumar, Ankita Tiwari, Jeetendra Kumar Tiwari, Subhasis Ghosh
Summary: Experimental investigation on critical phenomena in Cu2OSeO3 was conducted by analyzing the critical behavior of magnetization using a new method, leading to the construction of a magnetic phase diagram. Multiple critical points resulting from multiple phases and transitions between them were observed in the phase diagram.
PHYSICAL REVIEW LETTERS
(2022)
Article
Materials Science, Multidisciplinary
S. Ghosh, C. Lane, F. Ronning, E. D. Bauer, J. D. Thompson, J. -X. Zhu, P. F. S. Rosa, S. M. Thomas
Summary: This study reports the discovery of a colossal piezoresistance in Eu5In2Sb6 single crystals, where anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. The highly anisotropic piezoresistance of Eu5In2Sb6 shows a resistivity drop of > 99.95% under uniaxial pressure along [001], resulting in a colossal piezoresistance factor of 5000 Chi 10(-11) Pa-1. This finding not only reveals the role of interactions and phase separation in achieving colossal piezoresistance, but also suggests a pathway for the development of multifunctional devices with large responses to both pressure and magnetic field.
Article
Chemistry, Analytical
Niazul Khan, Mohammad Mousazadehkasin, Sujoy Ghosh, John G. Tsavalas, Edward Song
Article
Biotechnology & Applied Microbiology
Sujoy Ghosh, Niazul Khan, John G. Tsavalas, Edward Song
FRONTIERS IN BIOENGINEERING AND BIOTECHNOLOGY
(2018)
Article
Materials Science, Multidisciplinary
Sujoy Ghosh, Prasanna D. Patil, Milinda Wasala, Sidong Lei, Andrew Nolander, Pooplasingam Sivakumar, Robert Vajtai, Pulickel Ajayan, Saikat Talapatra
