The effects of (Bi2Te3-Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

The influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3- Bi2O3- TeO2- PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV-Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I-V and impedance spectroscopy measurements and using different calculation methods. The surface states (N-ss) have been calculated. The real and imaginary components of the permittivity (epsilon* = epsilon'-j epsilon ''), complex modulus (M* = M' +jM ''), dielectric loss tangent, and conductivity (sigma(ac)) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3-Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.