4.5 Article

C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure

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PHYSICA B-CONDENSED MATTER
卷 582, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.physb.2020.411996

关键词

Indium oxide (In2O3); Polyvinylpyrrolidone (PVP); MPS structure; Capacitance; Conductance; Frequency dependence

资金

  1. Gazi University Scientific Research Project [GU-BAP.05/2019-26]

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In this work, the indium oxide (In2O3)-polyvinylpyrrolidone(PVP) film on the n-Si substrate was coated by a spin coating method. Thus, the Au/(In2O3-PVP)/n-Si metal-polymer-semiconductor (MPS) structure was fabricated. The capacitance/conductance-voltage-frequency (C-V-f and G/omega-V-f) characteristics of the fabricated MPS structure have been analyzed in the frequency range of 10 kHz - 1 MHz. The series resistance (R-S) and interface state density (N-SS) value of the MPS structure were determined by using the conductance and Hill-Coleman method, respectively. In addition, other electronic parameters such as the diffusion potential, barrier height, depletion layer width, and surface potential were extracted from the C-2-V characteristics.

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