Cross‐Point Arrays with Low‐Power ITO‐HfO 2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications

(2019) Alessandro Grossi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory

(2019) Chun-Chu Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Towards spike-based machine intelligence with neuromorphic computing

(2019) Kaushik Roy et al.   NATURE

Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

(2017) Olli-Pekka Kilpi et al.   NANO LETTERS

Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films

(2017) Jie Shang et al.   Nanoscale

Effects of erbium doping of indium tin oxide electrode in resistive random access memory

(2016) Po-Hsun Chen et al.   Applied Physics Express

Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

(2016) Martin Berg et al.   IEEE ELECTRON DEVICE LETTERS

Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access Memory

(2016) Po-Hsun Chen et al.   IEEE ELECTRON DEVICE LETTERS

Vertically Integrated Nanowire-Based Unified Memory

(2016) Byung-Hyun Lee et al.   NANO LETTERS

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

(2015) Chih-Yang Lin et al.   IEEE ELECTRON DEVICE LETTERS

Materials selection for oxide-based resistive random access memories

(2014) Yuzheng Guo et al.   APPLIED PHYSICS LETTERS

Highly Compact (4F2) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application

(2014) Bing Chen et al.   Scientific Reports

Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

(2013) Li Ji et al.   NANO LETTERS

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

(2012) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Uniform and position-controlled InAs nanowires on 2′′Si substrates for transistor applications

(2011) Sepideh Gorji Ghalamestani et al.   NANOTECHNOLOGY