Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO 2 film grown on Cu foil substrate for flexible nonvolatile memory device
Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO 2 film grown on Cu foil substrate for flexible nonvolatile memory device
作者
关键词
Resistive switching, TiO, 2, Memory device, Conducting filaments
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