Improved capacitive memory of Er:TiO2 TF based MOS device

标题

作者

关键词

Er:TiO, 2, Interface trap density, CV hysteresis, Memory window, Retention, Endurance

出版物

Volume 792, Issue -, Pages 679-683

出版商

Elsevier BV

发表日期

2019-04-09

DOI

10.1016/j.jallcom.2019.04.040

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