标题
Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 118, Issue 10, Pages 102903
出版商
AIP Publishing
发表日期
2021-03-10
DOI
10.1063/5.0035579
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium
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- A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
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