Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

标题
Very Low-Programming-Current RRAM With Self-Rectifying Characteristics
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 37, Issue 4, Pages 404-407
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2016-02-20
DOI
10.1109/led.2016.2530942

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