Phase separation in amorphous tantalum oxide from first principles

Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum

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Insights into the Li-Metal/Organic Carbonate Interfacial Chemistry by Combined First-Principles Theory and X-ray Photoelectron Spectroscopy

(2018) Mahsa Ebadi et al.   Journal of Physical Chemistry C

Tuning the stoichiometry and electrical properties of tantalum oxide thin films

(2018) Yang Li et al.   APPLIED SURFACE SCIENCE

Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors

(2016) Suhas Kumar et al.   ADVANCED MATERIALS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Role of atomistic structure in the stochastic nature of conductivity in substoichiometric tantalum pentoxide

(2016) Robert J. Bondi et al.   JOURNAL OF APPLIED PHYSICS

Nanostructuring of Ta2O5 surfaces by low energy Ar+ bombardment

(2015) Noelia Benito et al.   APPLIED SURFACE SCIENCE

Oxidation state and interfacial effects on oxygen vacancies in tantalum pentoxide

(2015) Robert J. Bondi et al.   JOURNAL OF APPLIED PHYSICS

Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5

(2015) Yuzheng Guo et al.   MICROELECTRONIC ENGINEERING

Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study

(2014) Bo Xiao et al.   Nanoscale

Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations

(2013) Robert J. Bondi et al.   JOURNAL OF APPLIED PHYSICS

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Hidden Structural Order in OrthorhombicTa2O5

(2013) Sung-Hoon Lee et al.   PHYSICAL REVIEW LETTERS

Surface Acoustic Wave Properties of Amorphous Ta$_{2}$O$_{5}$ and Nb$_{2}$O$_{5}$ Thin Films Prepared by Radio Frequency Sputtering

(2012) Shoji Kakio et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Amorphous to crystalline transformation in Ta2O5 studied by Raman spectroscopy

(2012) C. Joseph et al.   JOURNAL OF RAMAN SPECTROSCOPY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Communication: Systematic shifts of the lowest unoccupied molecular orbital peak in x-ray absorption for a series of 3d metal porphyrins

(2010) J. M. García-Lastra et al.   JOURNAL OF CHEMICAL PHYSICS

Synthesis, structure and magnetic properties of V4O9—A missing link in binary vanadium oxides

(2010) Satoshi Yamazaki et al.   JOURNAL OF SOLID STATE CHEMISTRY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE