Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications

Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces

(2019) Zhe Cheng et al.   APL Materials

High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces

(2019) Fengwen Mu et al.   ACS Applied Materials & Interfaces

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

(2019) Jun Lu et al.   APPLIED PHYSICS LETTERS

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

(2018) Chao Yuan et al.   APPLIED PHYSICS LETTERS

GaN-on-Si Power Technology: Devices and Applications

(2017) Kevin J. Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer

(2016) B. L. Hancock et al.   APPLIED PHYSICS LETTERS

Thermal transport through GaN–SiC interfaces from 300 to 600 K

(2015) Elbara Ziade et al.   APPLIED PHYSICS LETTERS

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

(2015) Huarui Sun et al.   APPLIED PHYSICS LETTERS

Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity

(2015) Ali Darwish et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

(2015) Jason P. Jones et al.   MICROELECTRONICS RELIABILITY

Thermal boundary conductance across metal-gallium nitride interfaces from 80 to 450 K

(2014) Brian F. Donovan et al.   APPLIED PHYSICS LETTERS

Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

(2014) James W. Pomeroy et al.   IEEE ELECTRON DEVICE LETTERS

Phonon scattering in strained transition layers for GaN heteroepitaxy

(2014) Jungwan Cho et al.   PHYSICAL REVIEW B

Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

(2013) Dennis Christy et al.   Applied Physics Express

A Survey of Wide Bandgap Power Semiconductor Devices

(2013) Jose Millan et al.   IEEE TRANSACTIONS ON POWER ELECTRONICS

Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors

(2013) Sukwon Choi et al.   JOURNAL OF APPLIED PHYSICS

Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology

(2012) Jungwan Cho et al.   IEEE ELECTRON DEVICE LETTERS

Thermal conductance and phonon transmissivity of metal–graphite interfaces

(2010) Aaron J. Schmidt et al.   JOURNAL OF APPLIED PHYSICS

Extension of the diffuse mismatch model for thermal boundary conductance between isotropic and anisotropic materials

(2009) John C. Duda et al.   APPLIED PHYSICS LETTERS

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

(2009) K.D. Chabak et al.   IEEE ELECTRON DEVICE LETTERS

Examining Interfacial Diffuse Phonon Scattering Through Transient Thermoreflectance Measurements of Thermal Boundary Conductance

(2009) Pamela M. Norris et al.   JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME

AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz

(2008) Masataka Higashiwaki et al.   Applied Physics Express

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

(2008) Takuma Nanjo et al.   APPLIED PHYSICS LETTERS