Thermal transport through GaN–SiC interfaces from 300 to 600 K

标题
Thermal transport through GaN–SiC interfaces from 300 to 600 K
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 107, Issue 9, Pages 091605
出版商
AIP Publishing
发表日期
2015-09-04
DOI
10.1063/1.4930104

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