Interfacial Impurities and Their Electronic Signatures in High‐Voltage Regrown Nonpolar m‐ Plane GaN Vertical p–n Diodes

High-Voltage Regrown Nonpolar ${m}$ -Plane Vertical p-n Diodes: A Step Toward Future Selective-Area-Doped Power Switches

(2019) M. Monavarian et al.   IEEE ELECTRON DEVICE LETTERS

Impact of substrate off-angle on the m-plane GaN Schottky diodes

(2018) Hisashi Yamada et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Materials and processing issues in vertical GaN power electronics

(2018) Jie Hu et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates

(2018) Houqiang Fu et al.   Applied Physics Express

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

(2018) Kai Fu et al.   APPLIED PHYSICS LETTERS

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy

(2017) Zongyang Hu et al.   IEEE ELECTRON DEVICE LETTERS

Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

(2017) Yuhao Zhang et al.   IEEE ELECTRON DEVICE LETTERS

m -Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off-Angle m -Plane GaN Substrates

(2017) Atsushi Tanaka et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications

(2017) Jiangfeng Du et al.   SUPERLATTICES AND MICROSTRUCTURES

Vertical GaN Power Diodes With a Bilayer Edge Termination

(2016) Jeramy R. Dickerson et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrical characteristics of Au/Ni Schottky diodes on cleavedm-plane surfaces of free-standing n-GaN substrates

(2016) Moe Naganawa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

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Vertical Power p-n Diodes Based on Bulk GaN

(2015) Isik C. Kizilyalli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing

(2015) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

(2014) Isik C. Kizilyalli et al.   IEEE ELECTRON DEVICE LETTERS

1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

(2014) Hui Nie et al.   IEEE ELECTRON DEVICE LETTERS

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

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Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

(2010) R.M. Farrell et al.   JOURNAL OF CRYSTAL GROWTH

Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

(2009) Samantha C. Cruz et al.   JOURNAL OF CRYSTAL GROWTH

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

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