Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study
出版年份 2019 全文链接
标题
Spontaneous polarization enhancement in ferroelectric Hf0.5Zr0.5O2 using atomic oxygen defects engineering: An ab initio study
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 115, Issue 9, Pages 092905
出版商
AIP Publishing
发表日期
2019-08-27
DOI
10.1063/1.5115293
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Unveiling the double-well energy landscape in a ferroelectric layer
- (2019) Michael Hoffmann et al. NATURE
- Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition
- (2019) C. Zacharaki et al. APPLIED PHYSICS LETTERS
- Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4 K
- (2019) M. D. Henry et al. APPLIED PHYSICS LETTERS
- TiNx/Hf0.5Zr0.5O2/TiNx ferroelectric memory with tunable transparency and suppressed wake-up effect
- (2019) Yuxing Li et al. APPLIED PHYSICS LETTERS
- Effect of oxygen vacancies on the ferroelectric Hf0.5Zr0.5O2 stabilization: DFT simulation
- (2019) D.R. Islamov et al. MICROELECTRONIC ENGINEERING
- Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2
- (2018) T V Perevalov et al. NANOTECHNOLOGY
- Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
- (2018) Damir R. Islamov et al. ACTA MATERIALIA
- Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing
- (2017) Jiuren Zhou et al. IEEE ELECTRON DEVICE LETTERS
- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
- (2016) S. Starschich et al. APPLIED PHYSICS LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
- (2014) S. Clima et al. APPLIED PHYSICS LETTERS
- Optimized norm-conserving Vanderbilt pseudopotentials
- (2013) D. R. Hamann PHYSICAL REVIEW B
- The analysis of a plane wave pseudopotential density functional theory code on a GPU machine
- (2012) Weile Jia et al. COMPUTER PHYSICS COMMUNICATIONS
- A beginner's guide to the modern theory of polarization
- (2012) Nicola A. Spaldin JOURNAL OF SOLID STATE CHEMISTRY
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
- (2009) Paolo Giannozzi et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Oxygen vacancy formation energy and its effect on spontaneous polarization inBi4Ti3O12: A first-principles theoretical study
- (2008) T. Hashimoto et al. PHYSICAL REVIEW B
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