Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
出版年份 2016 全文链接
标题
Hole mobility modulation of solution-processed nickel oxide thin-film transistor based on high-k dielectric
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 23, Pages 233506
出版商
AIP Publishing
发表日期
2016-06-09
DOI
10.1063/1.4953460
参考文献
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