Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)
出版年份 2015 全文链接
标题
Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 25, Issue 43, Pages 6802-6813
出版商
Wiley
发表日期
2015-10-09
DOI
10.1002/adfm.201502953
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Copper thiocyanate: An attractive hole transport/extraction layer for use in organic photovoltaic cells
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