Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

Resistive Switching Behaviors of HfO$_{2}$ Thin Films by Sol–Gel Spin Coating for Nonvolatile Memory Applications

(2012) Ananthakumar Ramadoss et al.   Applied Physics Express

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

(2011) Qian Lu et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

The influence of copper top electrodes on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

(2009) Lin Yang et al.   APPLIED PHYSICS LETTERS

Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

(2009) Hu Young Jeong et al.   APPLIED PHYSICS LETTERS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

(2009) Myoung-Jae Lee et al.   NANO LETTERS

Time-to-Breakdown Weibull Distribution of Thin Gate Oxide Subjected to Nanoscaled Constant-Voltage and Constant-Current Stresses

(2008) You-Lin Wu et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

(2008) Yong-Mu Kim et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today