Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors

标题
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 5, Pages 051606
出版商
AIP Publishing
发表日期
2016-08-06
DOI
10.1063/1.4960200

向作者/读者发起求助以获取更多资源

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now