期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 18, 期 9, 页码 6509-6514出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cp07650a
关键词
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资金
- National Natural Science Foundation of China [11304410]
- Natural Science Foundation of Technology Department [QJHJZ-LKZS[2012]03, QKHJZ[2014]2170]
- Youth Science Foundation of Education Ministry of Guizhou Province of China [QJHKZ[2012]084]
A two-bit memory and quantized storage phenomenon are observed at room temperature for a device based on the traditional MOS structure with double-stacked Pt-nanocrystals (Pt-NCs). A 2.68 and 1.72 V flat band voltage shift (memory window) has been obtained when applying a +/- 7 V programming/erasing voltage to the structures with double-stacked Pt-NCs. The memory windows of 2.40 and 1.44 V can be retained after stress for 10(5) seconds, which correspond to 89.55% and 83.72% stored charges reserved. The quantized charge storage phenomenon characterized by current-voltage (J-V) hysteresis curves was detected at room temperature. The shrinkage of the memory window results from the decreasing tunneling probability, which strongly depends on the number of stacks. The traps, de-traps and quantum confinement effects of Pt-NCs may contribute to the improvement of dielectric characteristics and the two-bit memory behavior. The multi-bit memory and quantized storage behavior observed in the Pt-NCs stacks structure at room temperature might provide a feasible method for realizing the multi-bit storage in non-volatile flash memory devices.
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