Silicon compatible Sn-based resistive switching memory

On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

(2016) M. Saadi et al.   JOURNAL OF APPLIED PHYSICS

Engineering the switching dynamics of TiOx-based RRAM with Al doping

(2016) Maria Trapatseli et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

(2016) Daniele Ielmini   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

(2016) Gang Du et al.   AIP Advances

Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

(2015) Jeonghwan Song et al.   APPLIED PHYSICS LETTERS

Excellent R off /R on ratio and short programming time in Cu/Al2 O3 -based conductive-bridging RAM under low-current (10 μA) operation

(2015) Attilio Belmonte et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Memory and Information Processing in Neuromorphic Systems

(2015) Giacomo Indiveri et al.   PROCEEDINGS OF THE IEEE

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

(2014) Haitao Sun et al.   ADVANCED FUNCTIONAL MATERIALS

Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses

(2013) Manan Suri et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

The Effect of Silicon Oxide Based RRAM with Tin Doping

(2011) Kuan-Chang Chang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory

(2009) D. Kamalanathan et al.   IEEE ELECTRON DEVICE LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optimization methods for finding minimum energy paths

(2008) Daniel Sheppard et al.   JOURNAL OF CHEMICAL PHYSICS