A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

出版年份 2018 全文链接

标题

作者

关键词

出版物

Volume 6, Issue -, Pages 341-345

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2018-02-24

DOI

10.1109/jeds.2018.2805285

Discuss science. Find collaborators. Network.

Join a conversation

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now