Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors

Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors

(2016) Nazila Haratipour et al.   ACS Nano

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

(2016) Youngseo Park et al.   APPLIED PHYSICS LETTERS

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

(2016) Song-Lin Li et al.   CHEMICAL SOCIETY REVIEWS

Performance Potential and Limit of MoS2Transistors

(2015) Xuefei Li et al.   ADVANCED MATERIALS

Electrically Tunable Bandgaps in Bilayer MoS2

(2015) Tao Chu et al.   NANO LETTERS

Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

(2015) Jingli Wang et al.   Small

Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors

(2014) Mikai Chen et al.   ACS Nano

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar Behavior, and Scaling

(2014) Yuchen Du et al.   ACS Nano

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

MoS2 functionalization for ultra-thin atomic layer deposited dielectrics

(2014) Angelica Azcatl et al.   APPLIED PHYSICS LETTERS

Tunability of Short-Channel Effects in MoS2 Field-Effect Devices

(2014) Feng Zhang et al.   NANO LETTERS

Floating Gate Memory-based Monolayer MoS2Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

(2014) Jingli Wang et al.   Small

Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

(2013) Dung-Sheng Tsai et al.   ACS Nano

Velocity saturation in few-layer MoS2 transistor

(2013) Gianluca Fiori et al.   APPLIED PHYSICS LETTERS

Electronic and optical properties of MoS2 (0001) thin films: Feasibility for solar cells

(2013) Alpa Dashora et al.   COMPUTATIONAL MATERIALS SCIENCE

Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors

(2013) Song-Lin Li et al.   NANO LETTERS

Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films

(2013) Han Liu et al.   NANO LETTERS

Electroluminescence in Single Layer MoS2

(2013) R. S. Sundaram et al.   NANO LETTERS

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Channel Length Scaling of MoS2 MOSFETs

(2012) Han Liu et al.   ACS Nano

Hysteresis in Single-Layer MoS2 Field Effect Transistors

(2012) Dattatray J. Late et al.   ACS Nano

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

(2012) Han Liu et al.   IEEE ELECTRON DEVICE LETTERS

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer

(2012) Zongyou Yin et al.   Small

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Sub-100 nm Channel Length Graphene Transistors

(2010) Lei Liao et al.   NANO LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

High-speed graphene transistors with a self-aligned nanowire gate

(2010) Lei Liao et al.   NATURE

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

The Ground Plane in Buried Oxide for Controlling Short-Channel Effects in Nanoscale SOI MOSFETs

(2008) M. Jagadesh Kumar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES