标题
MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 11, Pages 111601
出版商
AIP Publishing
发表日期
2014-03-20
DOI
10.1063/1.4869149
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Defect-Dominated Doping and Contact Resistance in MoS2
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