Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate

Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors

(2018) S.V. Tikhov et al.   MICROELECTRONIC ENGINEERING

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

(2016) M. N. Koryazhkina et al.   SEMICONDUCTORS

Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

(2016) S. V. Tikhov et al.   TECHNICAL PHYSICS LETTERS

Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

(2015) Sungjun Kim et al.   SOLID-STATE ELECTRONICS

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

(2014) Xiaofan Jiang et al.   JOURNAL OF APPLIED PHYSICS

The forming process in resistive-memory elements based on metal-insulator-semiconductor structures

(2014) S. V. Tikhov et al.   TECHNICAL PHYSICS LETTERS

Transport mechanisms of electrons and holes in dielectric films

(2013) K A Nasyrov et al.   PHYSICS-USPEKHI

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

(2013) A. E. Berdnikov et al.   SEMICONDUCTORS

Electronic structure of silicon nitride

(2012) Vladimir A Gritsenko   PHYSICS-USPEKHI