Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors

(2018) Yuewei Zhang et al.   APPLIED PHYSICS LETTERS

A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

(2018) Kentaro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evaluation of band alignment of α-Ga2O3/α-(Al x Ga1− x )2O3 heterostructures by X-ray photoelectron spectroscopy

(2018) Takayuki Uchida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Bandgap engineering of α-(AlxGa1-x)2O3 by a mist chemical vapor deposition two-chamber system and verification of Vegard's Law

(2018) G. T. Dang et al.   APPLIED PHYSICS LETTERS

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2grown by MIST EPITAXY®

(2016) Masaya Oda et al.   Applied Physics Express

Reduction in edge dislocation density in corundum-structured α-Ga2O3layers on sapphire substrates with quasi-graded α-(Al,Ga)2O3buffer layers

(2016) Riena Jinno et al.   Applied Physics Express

All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

(2016) Yoshihiro Kokubun et al.   Applied Physics Express

Conductivity control of Sn-doped α-Ga2O3thin films grown on sapphire substrates

(2016) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Crack-free thick (∼5 µm) α-Ga2O3films on sapphire substrates with α-(Al,Ga)2O3buffer layers

(2016) Masaya Oda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

(2016) Shizuo Fujita et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth characteristics of corundum-structured α-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 heterostructures on sapphire substrates

(2016) Kentaro Kaneko et al.   JOURNAL OF CRYSTAL GROWTH

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions

(2014) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

Physics on development of open-air atmospheric pressure thin film fabrication technique using mist droplets: Control of precursor flow

(2014) Toshiyuki Kawaharamura   JAPANESE JOURNAL OF APPLIED PHYSICS

Growth of corundum-structured (InxGa1−x)2O3 alloy thin films on sapphire substrates with buffer layers

(2014) Norihiro Suzuki et al.   JOURNAL OF CRYSTAL GROWTH

Epitaxial growth of corundum-structured wide band gap III-oxide semiconductor thin films

(2014) Shizuo Fujita et al.   JOURNAL OF CRYSTAL GROWTH

Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

(2013) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Electrical Conductive Corundum-Structured α-Ga2O3Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

(2013) Kazuaki Akaiwa et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga2O3Thin Films by Fine-Channel Mist Chemical Vapor Deposition

(2013) Toshiyuki Kawaharamura et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evaluation of Misfit Relaxation in α-Ga2O3Epitaxial Growth on α-Al2O3Substrate

(2013) Kentaro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3

(2013) Kentaro Kaneko et al.   JOURNAL OF APPLIED PHYSICS

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

(2012) Kohei Sasaki et al.   Applied Physics Express

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

Influence of the morphology of platinum combined with β-Ga2O3 on the VOC response of work function type sensors

(2010) S. Stegmeier et al.   SENSORS AND ACTUATORS B-CHEMICAL

Flame Detection by a β-Ga2O3-Based Sensor

(2009) Takayoshi Oshima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3Substrates

(2008) Takayoshi Oshima et al.   Applied Physics Express

Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

(2008) Daisuke Shinohara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS