期刊
APPLIED PHYSICS EXPRESS
卷 9, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.071101
关键词
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资金
- Kurata Memorial Hitachi Science and Technology Foundation
- Mizuho Foundation for the Promotion of Sciences
Efforts have been made to reduce the density of defects in corundum-structured alpha-Ga2O3 thin films on sapphire substrates by applying quasi-graded alpha-(AlxGa1-x)(2)O-3 buffer layers. Transmission electron microscopy images revealed that most strains were located in the alpha-(AlxGa1-x)(2)O-3 buffer layers, and that the total density of dislocations in the alpha-Ga2O3 thin films was successfully decreased by more than one order of magnitude compared with that without buffer layers, that is, the screw and edge dislocation densities were about 3 x 10(8) and 6 x 10(8) cm(-2), respectively. (C) 2016 The Japan Society of Applied Physics
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