Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3

Highly crystalline corundum structured alpha-(Ga0.42Fe0.58)(2)O-3 alloy thin film showed magnetic properties at room temperature. Microstructure analysis of cross-sectional transmission electron microscope (TEM) observation and TEM energy dispersive X-ray spectroscopy measurement indicated that different crystal phase could not be detected as well as there is no remarkable phase separating area, that is, Fe and Ga ions are distributed uniformly in the film. Magnetic measurements were performed on alpha-(Ga1-xFex)(2)O-3 (x = 0.24, 0.44, 0.58, 1.00) alloy thin films at 110 K. The induced magnetic moment per a Fe ion of alpha-(Ga0.42Fe0.58)(2)O-3 at 5000 Oe is about 6 times larger than alpha-Fe2O3 thin film. Compared to the alpha-Fe2O3 thin films, the value of coercivity is also about 6 times in alpha-(Ga0.42Fe0.58)(2)O-3, in contrast, there is no significant difference in value of coercivity of alpha-(Ga1-xFex)(2)O-3 (x = 0.24, 0.44, 1.00) thin films. These means that the origin of magnetism is not the separation region of alpha-Fe2O3 in alpha-(Ga0.42Fe0.58)(2)O-3 thin film. (C) 2013 AIP Publishing LLC.