Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction

Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts

(2012) Yi Tong et al.   IEEE ELECTRON DEVICE LETTERS

Contact Technology for Strained nFinFETs With Silicon–Carbon Source/Drain Stressors Featuring Sulfur Implant and Segregation

(2012) Shao-Ming Koh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction

(2011) Masahiro Koike et al.   Applied Physics Express

Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

(2011) J. Chan et al.   APPLIED PHYSICS LETTERS

Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles study

(2011) T. Nakayama et al.   THIN SOLID FILMS

Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n+/p Junction

(2009) Tomonori Nishimura et al.   Applied Physics Express

Modeling of negatively charged states at the Ge surface and interfaces

(2009) P. Tsipas et al.   APPLIED PHYSICS LETTERS

Observation and Suppression of Nickel Germanide Overgrowth on Germanium Substrates with Patterned SiO[sub 2] Structures

(2007) D. P. Brunco et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS