Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction

(2011) Masahiro Koike et al.   Applied Physics Express

Investigation on Morphology and Thermal Stability of NiGe Utilizing Ammonium Fluoride Pretreatment for Germanium-Based Technology

(2011) Yue Guo et al.   IEEE ELECTRON DEVICE LETTERS

Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

(2010) Yue Guo et al.   APPLIED PHYSICS LETTERS

p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

(2009) Hyun-Yong Yu et al.   IEEE ELECTRON DEVICE LETTERS

Diffusion and activation of n-type dopants in germanium

(2008) Masahiro Koike et al.   JOURNAL OF APPLIED PHYSICS

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

(2008) M. Mueller et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials