Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems

Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory

(2015) Miguel A. Caro et al.   PHYSICAL REVIEW B

A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures

(2014) Oliver Marquardt et al.   COMPUTATIONAL MATERIALS SCIENCE

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

(2014) D. Kundys et al.   JOURNAL OF APPLIED PHYSICS

Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

(2013) Oliver Marquardt et al.   APPLIED PHYSICS LETTERS

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

(2013) Tongtong Zhu et al.   APPLIED PHYSICS LETTERS

Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots

(2013) Stefan Barthel et al.   EUROPEAN PHYSICAL JOURNAL B

Model of a GaAs Quantum Dot Embedded in a Polymorph AlGaAs Nanowire

(2013) D. Barettin et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

(2013) Tongtong Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Polarization of emission from non-polar III-nitride quantum wells: the influence of confinement

(2013) Ashish Arora et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials

(2013) Oliver Marquardt et al.   NANO LETTERS

Nonlinear piezoelectricity in wurtzite semiconductors

(2013) Pierre-Yves Prodhomme et al.   PHYSICAL REVIEW B

Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides

(2013) Miguel A. Caro et al.   PHYSICAL REVIEW B

Effect of piezoelectric constants in electronic structures of InGaN quantum dots

(2013) K B Hong et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

(2012) S. Schulz et al.   APPLIED PHYSICS LETTERS

Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects

(2012) K. Schuh et al.   APPLIED PHYSICS LETTERS

Computational Methods for Electromechanical Fields in Self-Assembled Quantum Dots

(2012) D. Barettin et al.   Communications in Computational Physics

Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides

(2012) M. A. Caro et al.   PHYSICAL REVIEW B

Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions

(2012) M T Crowley et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Semipolar GaN grown on foreign substrates: a review

(2012) F Scholz   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

(2011) A. Das et al.   APPLIED PHYSICS LETTERS

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

(2011) H. Jönen et al.   APPLIED PHYSICS LETTERS

Structure and strain state of polar and semipolar InGaN quantum dots

(2011) T. Koukoula et al.   APPLIED SURFACE SCIENCE

Built-in field control in alloyedc-plane III-N quantum dots and wells

(2011) M. A. Caro et al.   JOURNAL OF APPLIED PHYSICS

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

(2011) Poul Georg Moses et al.   JOURNAL OF CHEMICAL PHYSICS

Solid-State Lighting

(2011) Colin J. Humphreys   MRS BULLETIN

A flexible, plane-wave based multiband $${\mathbf{k}\cdot\mathbf{p}}$$ model

(2011) Oliver Marquardt et al.   OPTICAL AND QUANTUM ELECTRONICS

Built-in fields in stacked InGaN/GaN quantum dots

(2011) Stefan Schulz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

(2011) L. Schade et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Influence of exciton-phonon coupling and strain on the anisotropic optical response of wurtzite AlN around the band edge

(2011) Georg Rossbach et al.   PHYSICAL REVIEW B

Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots

(2011) S. Schulz et al.   PHYSICAL REVIEW B

Second-order piezoelectricity in wurtzite III-N semiconductors

(2011) Joydeep Pal et al.   PHYSICAL REVIEW B

First- and second-order piezoelectricity in III-V semiconductors

(2011) Annie Beya-Wakata et al.   PHYSICAL REVIEW B

The object-oriented DFT program library S/PHI/nX

(2010) S. Boeck et al.   COMPUTER PHYSICS COMMUNICATIONS

Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN

(2010) E Sakalauskas et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Electronic and optical properties of nonpolara-plane GaN quantum wells

(2010) S. Schulz et al.   PHYSICAL REVIEW B

Band parameters and strain effects in ZnO and group-III nitrides

(2010) Qimin Yan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Plane-wave implementation of the real-space formalism and continuum elasticity theory

(2009) Oliver Marquardt et al.   COMPUTER PHYSICS COMMUNICATIONS

Theory of GaN Quantum Dots for Optical Applications

(2009) D.P. Williams et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

(2009) Hisashi Masui et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

(2009) Oliver Marquardt et al.   JOURNAL OF APPLIED PHYSICS

Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes

(2009) Hung-Hsun Huang et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Are AlN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspective

(2009) Jayeeta Bhattacharyya et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Polarization fields in nitride-based quantum dots grown on nonpolar substrates

(2009) Stefan Schulz et al.   PHYSICAL REVIEW B

In(Ga)As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs

(2009) Andrei Schliwa et al.   PHYSICAL REVIEW B

Comparison of wurtzite atomistic and piezoelectric continuum strain models: Implications for the electronic band structure

(2009) D. Barettin et al.   SUPERLATTICES AND MICROSTRUCTURES

Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations

(2008) M. Funato et al.   JOURNAL OF APPLIED PHYSICS

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B