Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

(2011) Xuelin Yang et al.   APPLIED PHYSICS LETTERS

Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects

(2011) J. Seebeck et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Optical properties of single InGaN quantum dots and their devices

(2011) K. Sebald et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

(2011) C. Tessarek et al.   PHYSICAL REVIEW B

Composition mapping in InGaN by scanning transmission electron microscopy

(2011) Andreas Rosenauer et al.   ULTRAMICROSCOPY

Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

(2010) Daniel Mourad et al.   PHYSICAL REVIEW B

Band parameters and strain effects in ZnO and group-III nitrides

(2010) Qimin Yan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Plane-wave implementation of the real-space formalism and continuum elasticity theory

(2009) Oliver Marquardt et al.   COMPUTER PHYSICS COMMUNICATIONS

Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

(2009) Oliver Marquardt et al.   JOURNAL OF APPLIED PHYSICS

Polarization fields in nitride-based quantum dots grown on nonpolar substrates

(2009) Stefan Schulz et al.   PHYSICAL REVIEW B

Multiband description of the optical properties of zincblende nitride quantum dots

(2009) Stefan Schulz et al.   PHYSICAL REVIEW B

Few-particle energies versus geometry and composition ofInxGa1−xAs/GaAsself-organized quantum dots

(2009) Andrei Schliwa et al.   PHYSICAL REVIEW B

Light-emitting diode development on polar and non-polar GaN substrates

(2008) C. Wetzel et al.   JOURNAL OF CRYSTAL GROWTH