Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots

Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

(2012) S. Schulz et al.   APPLIED PHYSICS LETTERS

Strong dipole coupling in nonpolar nitride quantum dots due to Coulomb effects

(2012) K. Schuh et al.   APPLIED PHYSICS LETTERS

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

(2011) Xuelin Yang et al.   APPLIED PHYSICS LETTERS

Optical properties of single InGaN quantum dots and their devices

(2011) K. Sebald et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

(2011) C. Tessarek et al.   PHYSICAL REVIEW B

Composition mapping in InGaN by scanning transmission electron microscopy

(2011) Andreas Rosenauer et al.   ULTRAMICROSCOPY

Effect of bonding and static atomic displacements on composition quantification inInxGa1−xNyAs1−y

(2010) Knut Müller et al.   PHYSICAL REVIEW B

Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

(2010) Daniel Mourad et al.   PHYSICAL REVIEW B

Band parameters and strain effects in ZnO and group-III nitrides

(2010) Qimin Yan et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Plane-wave implementation of the real-space formalism and continuum elasticity theory

(2009) Oliver Marquardt et al.   COMPUTER PHYSICS COMMUNICATIONS

Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

(2009) Oliver Marquardt et al.   JOURNAL OF APPLIED PHYSICS

Multiexciton complexes in InAs self-assembled quantum dots

(2009) M. Korkusinski et al.   JOURNAL OF APPLIED PHYSICS

Polarization fields in nitride-based quantum dots grown on nonpolar substrates

(2009) Stefan Schulz et al.   PHYSICAL REVIEW B

Multiband description of the optical properties of zincblende nitride quantum dots

(2009) Stefan Schulz et al.   PHYSICAL REVIEW B

Few-particle energies versus geometry and composition ofInxGa1−xAs/GaAsself-organized quantum dots

(2009) Andrei Schliwa et al.   PHYSICAL REVIEW B

Light-emitting diode development on polar and non-polar GaN substrates

(2008) C. Wetzel et al.   JOURNAL OF CRYSTAL GROWTH

Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN

(2008) Patrick Rinke et al.   PHYSICAL REVIEW B

Building semiconductor nanostructures atom by atom

(2007) M. Korkusinski et al.   MICROELECTRONICS JOURNAL