Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers

(2011) Xuelin Yang et al.   APPLIED PHYSICS LETTERS

Built-in field reduction in InGaN/GaN quantum dot molecules

(2011) S. Schulz et al.   APPLIED PHYSICS LETTERS

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

(2011) A. Das et al.   APPLIED PHYSICS LETTERS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Large internal dipole moment in InGaN/GaN quantum dots

(2010) Irina A. Ostapenko et al.   APPLIED PHYSICS LETTERS

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

(2010) M. Häberlen et al.   JOURNAL OF APPLIED PHYSICS

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire

(2009) C.F. Johnston et al.   JOURNAL OF CRYSTAL GROWTH

Nitride-based quantum dots for single photon source applications

(2009) Anas F. Jarjour et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Understanding nonpolar GaN growth through kinetic Wulff plots

(2008) Qian Sun et al.   JOURNAL OF APPLIED PHYSICS