Effects of Excimer Laser Annealing on InGaZnO4Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

标题
Effects of Excimer Laser Annealing on InGaZnO4Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 11, Pages 115505
出版商
Japan Society of Applied Physics
发表日期
2009-11-20
DOI
10.1143/jjap.48.115505

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