Localization effect of a current-path in amorphous In–Ga–Zn–O thin film transistors with a highly doped buried-layer

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 519, Issue 13, Pages 4347-4350

出版商

Elsevier BV

发表日期

2011-02-26

DOI

10.1016/j.tsf.2011.02.033

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