Modified Stoichiometry in Homogeneous Indium-Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions
出版年份 2015 全文链接
标题
Modified Stoichiometry in Homogeneous Indium-Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions
作者
关键词
-
出版物
Advanced Materials Interfaces
Volume 3, Issue 4, Pages 1500606
出版商
Wiley
发表日期
2015-12-17
DOI
10.1002/admi.201500606
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Homojunction Solution-Processed Metal Oxide Thin-Film Transistors Using Passivation-Induced Channel Definition
- (2014) Jung Hyun Kim et al. ACS Applied Materials & Interfaces
- Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In–Ga–Zn–O Thin-Film Transistors
- (2014) Young Jun Tak et al. ACS Applied Materials & Interfaces
- Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In–Ga–Zn–O Thin-Film Transistors Using Hydrogen Peroxide
- (2014) Jeong Moo Kwon et al. ACS Applied Materials & Interfaces
- Boost Up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways
- (2014) You Seung Rim et al. ADVANCED MATERIALS
- Review of solution-processed oxide thin-film transistors
- (2014) Si Joon Kim et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Interrelation between Chemical, Electronic, and Charge Transport Properties of Solution-Processed Indium–Zinc Oxide Semiconductor Thin Films
- (2014) Marc Häming et al. Journal of Physical Chemistry C
- Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices
- (2014) Doo Hyun Yoon et al. Journal of Materials Chemistry C
- Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc–Tin–Oxide/Indium–Gallium–Zinc–Oxide Thin-Film Transistors Using a Solution Process
- (2013) Chul Ho Kim et al. ACS Applied Materials & Interfaces
- Low-Cost Label-Free Electrical Detection of Artificial DNA Nanostructures Using Solution-Processed Oxide Thin-Film Transistors
- (2013) Si Joon Kim et al. ACS Applied Materials & Interfaces
- Increase of interface and bulk density of states in amorphous-indium-gallium-zinc-oxide thin-film transistors with negative-bias-under-illumination-stress time
- (2012) Jae Gwang Um et al. APPLIED PHYSICS LETTERS
- Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor
- (2012) Li-Feng Teng et al. APPLIED PHYSICS LETTERS
- Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
- (2012) Hyo Jin Kim et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
- (2012) Seonghyun Kim et al. NANOTECHNOLOGY
- Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors
- (2012) Jun Li et al. VACUUM
- Performance Improvement by Stress Memorization Technique in Trigate Silicon Nanowire MOSFETs
- (2011) Masumi Saitoh et al. IEEE ELECTRON DEVICE LETTERS
- Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors
- (2011) Sooyeon Hwang et al. THIN SOLID FILMS
- Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
- (2010) Gun Hee Kim et al. APPLIED PHYSICS LETTERS
- Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
- (2010) K. K. Banger et al. NATURE MATERIALS
- Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress
- (2009) Po-Tsun Liu et al. APPLIED PHYSICS LETTERS
- High mobility indium free amorphous oxide thin film transistors
- (2008) Elvira M. C. Fortunato et al. APPLIED PHYSICS LETTERS
- Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
- (2008) N. Huby et al. APPLIED PHYSICS LETTERS
- A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT
- (2008) Wataru Saito et al. IEEE ELECTRON DEVICE LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search