Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In–Ga–Zn–O Thin-Film Transistors Using Hydrogen Peroxide

标题
Improvement in Negative Bias Stress Stability of Solution-Processed Amorphous In–Ga–Zn–O Thin-Film Transistors Using Hydrogen Peroxide
作者
关键词
-
出版物
ACS Applied Materials & Interfaces
Volume 6, Issue 5, Pages 3371-3377
出版商
American Chemical Society (ACS)
发表日期
2014-02-07
DOI
10.1021/am4054139

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