Simultaneous engineering of the interface and bulk layer of Al/sol-NiOx/Si structured resistive random access memory devices

Effect of Hf incorporation in solution-processed NiOx based resistive random access memory

(2014) Doo Hyun Yoon et al.   APPLIED PHYSICS LETTERS

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

$\hbox{Ni/GeO}_{x}\hbox{/TiO}_{y}\hbox{/TaN}$ RRAM on Flexible Substrate With Excellent Resistance Distribution

(2013) K. I. Chou et al.   IEEE ELECTRON DEVICE LETTERS

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

(2013) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing

(2013) Se-I Oh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

(2012) Doo Hyun Yoon et al.   JOURNAL OF MATERIALS CHEMISTRY

Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors

(2012) You Seung Rim et al.   JOURNAL OF MATERIALS CHEMISTRY

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

(2012) Seonghyun Kim et al.   NANOTECHNOLOGY

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Reset Statistics of NiO-Based Resistive Switching Memories

(2011) Shibing Long et al.   IEEE ELECTRON DEVICE LETTERS

High Device Yield of Resistive Switching Characteristics in Oxygen-Annealed $\hbox{SrZrO}_{3}$ Memory Devices

(2011) Meng-Han Lin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Improved Resistive Switching Dispersion of NiOxThin Film by Cu-Doping Method

(2010) Chih-Yi Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Resistive Random Access Memory (ReRAM) Based on Metal Oxides

(2010) Hiroyuki Akinaga et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

(2008) M. J. Lee et al.   JOURNAL OF APPLIED PHYSICS

Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

(2008) Gun Hee Kim et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY