Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

标题
Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 5, Pages 055104
出版商
IOP Publishing
发表日期
2012-12-28
DOI
10.1088/0022-3727/46/5/055104

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