High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
出版年份 2015 全文链接
标题
High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-12-18
DOI
10.1038/srep18168
参考文献
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