Origin of subgap states in amorphous In-Ga-Zn-O

Band offsets in ZrO2/InGaZnO4 heterojunction

(2012) Jianke Yao et al.   APPLIED PHYSICS LETTERS

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

(2012) Kyeongmi Lee et al.   JOURNAL OF APPLIED PHYSICS

Analysis of electronic subgap states in amorphous semiconductor oxides based on the example of Zn-Sn-O systems

(2012) Wolfgang Körner et al.   PHYSICAL REVIEW B

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors

(2011) Keisuke Ide et al.   APPLIED PHYSICS LETTERS

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Density functional theory study for polycrystalline ZnO doped with Si or Nb

(2011) Wolfgang Körner et al.   PHYSICAL REVIEW B

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory

(2010) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

First-principles density functional study of dopant elements at grain boundaries in ZnO

(2010) Wolfgang Körner et al.   PHYSICAL REVIEW B

Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

(2010) Julia E. Medvedeva et al.   PHYSICAL REVIEW B

Intrinsic defects in ZnO calculated by screened exchange and hybrid density functionals

(2010) S. J. Clark et al.   PHYSICAL REVIEW B

Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor

(2009) Ayumu Sato et al.   APPLIED PHYSICS LETTERS

Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

(2009) Aron Walsh et al.   CHEMISTRY OF MATERIALS

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Defect Formation Energies without the Band-Gap Problem: Combining Density-Functional Theory and theGWApproach for the Silicon Self-Interstitial

(2009) Patrick Rinke et al.   PHYSICAL REVIEW LETTERS

Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Trap densities in amorphous-InGaZnO4 thin-film transistors

(2008) Mutsumi Kimura et al.   APPLIED PHYSICS LETTERS

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

(2008) Byung Du Ahn et al.   APPLIED PHYSICS LETTERS

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

(2008) Madambi K. Jayaraj et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Disorder and instability processes in amorphous conducting oxides

(2008) John Robertson   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS