Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

标题
Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 94, Issue 14, Pages 142107
出版商
AIP Publishing
发表日期
2009-04-11
DOI
10.1063/1.3118575

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