Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time

Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma

(2015) Rafaiel A. Ovanesyan et al.   ACS Applied Materials & Interfaces

Low temperature deposition of silicon nitride using Si3Cl8

(2015) Stefan Riedel et al.   THIN SOLID FILMS

Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition

(2014) Woochool Jang et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

(2011) H. B. Profijt et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

(2011) H. B. Profijt et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Plasma enhanced atomic layer deposition of SiNx:H and SiO2

(2011) Sean W. King   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas

(2011) H. C. M. Knoops et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes

(2009) A. J. M. Mackus et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Growth studies and characterization of silicon nitride thin films deposited by alternating exposures to Si2Cl6 and NH3

(2009) Kwangchol Park et al.   THIN SOLID FILMS