High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface

标题
High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insulator Interface
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 12, Pages H1121
出版商
The Electrochemical Society
发表日期
2010-10-22
DOI
10.1149/1.3502605

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