Article
Engineering, Electrical & Electronic
Guangyuan Li, Yuan Chen, Fangzhou Yu, Jonathan Viereck, Pavel Reyes, Richard Mendelsohn, Elena Galoppini, Yicheng Lu
Summary: This study developed a biosensor based on MgZnO dual-gate thin-film transistor (MZO DGTFT) for the sensitive detection of hexadecyl alkynated folic acid (HAFA), a derivative of folic acid (FA). The biosensor demonstrated high sensitivity in detecting the target molecule, showing promising potential for detecting FR overexpressed cancer cells.
IEEE SENSORS JOURNAL
(2021)
Article
Computer Science, Information Systems
Mamadou Lamine Samb, Emmanuel Jacques, Amadou Seidou Maiga, Tayeb Mohammed-Brahim
Summary: This article discusses the improvement of electrical parameters in amorphous or polycrystalline silicon and metal oxide-based TFTs by reducing the thickness of the channel layer. It is found that the behavior of subthreshold swing is independent of material type. The improved electrical stability under gate stress is attributed to the reduced electronic charge and lower injection of electrons into the gate insulator.
Article
Chemistry, Physical
Dewu Yue, Songbo Guo, Shun Han, Peijiang Cao, Yuxiang Zeng, Wangying Xu, Ming Fang, Wenjun Liu, Deliang Zhu, Youming Lu, Yongteng Qian
Summary: By systematically optimizing the synthesis conditions, high performance MgZnO/ZnO dual-active-layer TFTs were fabricated. The optimized TFTs exhibited high mobility and high Ion/off, making them suitable for high-performance electronic devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Materials Science, Multidisciplinary
Hongseok Oh, Shadi A. Dayeh
Summary: Highly sensitive force sensors of piezoelectric zinc oxide dual-gate thin film transistors are reported, along with an analytical model that elucidates the physical origins of their response. The dual-gate TFTs exhibited static and transient current changes under external forces, with an analytical model accurately portraying the piezoelectric response that modulates the energy-band edges and current-voltage characteristics. Demonstrating a field-tunable force response in single TFT, this work sheds light on the correlation between material properties and the force response in piezoelectric TFTs.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Engineering, Electrical & Electronic
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu
Summary: A negative capacitance thin-film transistor (NC-TFT) was fabricated on a glass substrate using MgZnO, with a Mg0.03Zn0.97O semiconductor layer as the channel and Ni0.02Mg0.15Zn0.83O as the ferroelectric layer. The NC-TFT showed significantly reduced subthreshold swing and a high on/off ratio of drain current.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Fangzhou Yu, Wen-Chiang Hong, Guangyuan Li, Yuxuan Li, Ming Lu, Yicheng Lu
Summary: The study introduces a novel wide bandgap oxide based negative capacitance transparent thin-film transistor (NC-TTFT) technology on glass, achieving high optical transmittance and low subthreshold swing values, and showing promising potential for wearable systems.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Chemistry, Physical
Taiki Kataoka, Yusaku Magari, Hisao Makino, Mamoru Furuta
Summary: The study demonstrated the conversion of a metallic indium oxide film into a nondegenerate semiconductor indium oxynitride film. By solid-phase crystallization, the Hall mobility was increased and carrier density was reduced, leading to improved field effect mobility in oxide thin film transistors.
Article
Nanoscience & Nanotechnology
Wanyu Zeng, Zengchong Peng, Dong Lin, Anna A. Guliakova, Qun Zhang, Guodong Zhu
Summary: This study reports a dual-mode proximity sensor based on an oxide thin-film transistor(TFT) that utilizes a tungsten carrier suppresser to develop semiconducting materials and devices. The sensor performs well in flat panel display applications and can also sense the proximity and angle of approach of charged objects.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
E. G. Zaytseva, O. Naumova, A. K. Gutakovskii
Summary: In this study, the coupling-effect was utilized to redistribute charge carriers in silicon-on-insulator thin films to determine the effective mobility near the interface under study. The temperature dependences of mobility were used to extract components of effective mobility related to phonon and interface roughness scattering of the carriers. The suggested approach can be used for non-destructive analysis of interface quality in films.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Vivek Singh, Jyoti Sinha, Sushobhan Avasthi
Summary: Copper oxides exhibit p-type conductivity, making them suitable for electronic applications. Pure-phase Cu2O can be obtained through a combination of chemical vapor deposition and oxidation processes. The material shows promising potential for electronic applications.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Crystallography
Samiul Hasan, Mohi Uddin Jewel, Scott R. Crittenden, Dongkyu Lee, Vitaliy Avrutin, Umit Ozgur, Hadis Morkoc, Iftikhar Ahmad
Summary: We investigated the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal-organic chemical vapor deposition (MOCVD). The results showed that the Ga2O3 layer has a significant impact on the threshold voltage, on-state capacitance, and leakage current of the device. The MOCVD-grown Ga2O3 dielectric layers were found to be thermally stable at high temperatures, making them a strong candidate for stable high-power devices.
Article
Chemistry, Multidisciplinary
Rudolf C. Hoffmann, Shawn Sanctis, Maciej O. Liedke, Maik Butterling, Andreas Wagner, Christian Njel, Jorg J. Schneider, Sherif Okeil
Summary: The cover of this issue features Jorg J. Schneider and colleagues from Technical University Darmstadt, Helmholtz-Zentrum Dresden-Rossendorf, and KIT Karlsruhe showcasing the application of high energy electron/positron couples to detect defect sites in semiconducting zinc oxide thin films.
CHEMISTRY-A EUROPEAN JOURNAL
(2021)
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Cai-Jia Tsai
Summary: The independent dual-gate operation improves performance and reliability of the JL-TFT, but may also cause more serious damages. The back gate voltage operation mode provides a wide threshold voltage tuning range, but it is important to note that positive top gate voltage stress may lead to more serious reliability issues.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Biophysics
Sehun Jeong, Jingyu Kim, Seong-In Cho, Taejoon Kang, Sunjoo Kim, Eun-Kyung Lim, Sang-Hee Ko Park
Summary: This study presents the development of a multiplex immunosensor based on dual-gate oxide TFT for rapid and accurate detection of influenza A pH1N1 virus, SARS-CoV-2, and RSV. The sensor demonstrates high sensitivity and can detect multiple viruses simultaneously, making it a potential point-of-care test for future pandemics.
BIOSENSORS & BIOELECTRONICS
(2023)
Article
Materials Science, Ceramics
Jie Wang, Yi-cong He, Tie-Cheng Luo, Ya Li, Zheng Zhou, Bing-feng Fan, Jian Li, Gang Wang
Summary: Metal-organic chemical vapor deposition (MOCVD) is essential for zinc oxide (ZnO) device development. This study compared film deposition rates and uniformity under different process parameters, analyzing the impact of flow field changes. The experimental results highly correlated with simulation results, validated through repeatability and stability tests.
CERAMICS INTERNATIONAL
(2021)