Article
Engineering, Electrical & Electronic
Nicolo Lago, Marco Buonomo, Rafael Cintra Hensel, Francesco Sedona, Mauro Sambi, Stefano Casalini, Andrea Cester
Summary: The rise of graphene as an innovative electronic material has led to the study and development of new 2-D materials. Reduced graphene oxide (rGO) has emerged as a simple and cost-effective solution for thin-film transistors (TFTs). This study characterizes liquid-gated ambipolar rGO-TFTs and provides a description of their working principle. By modeling the transistors' off-state conductivity, important parameters were extracted from rGO-TFTs with different levels of electrochemical reduction. The extracted parameters reveal that rGO-TFTs have similar hole and electron mobilities, with the more pronounced p-type behavior attributed to a positive shift in the p-type and n-type threshold voltages.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Hongyuan Xu, Guangmiao Wan, Jiaying Mai, Zhixiong Jiang, Bin Liu, Shengdong Zhang
Summary: Nanocrystalline silicon (nc-Si) films were successfully obtained through plasma enhanced chemical vapor deposition (PECVD) method. The effects of PECVD process parameters on the crystallization rate of nc-Si films were comprehensively studied, resulting in an optimized nc-Si film with a crystallinity of 50.87%. Furthermore, the electrical properties and stability of nc-Si TFTs were compared with a-Si TFTs, showing better photo stability of nc-Si TFTs due to fewer defect states in nc-Si films.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abet, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono
Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.
NATURE ELECTRONICS
(2021)
Article
Materials Science, Ceramics
A. Sanchez-Martinez, O. Ceballos-Sanchez, D. E. Guzman-Caballero, J. A. Avila-Avendano, C. E. Perez-Garcia, M. A. Quevedo-Lopez, R. Ramirez Bon
Summary: PbS thin films were deposited on different dielectric films using CBD technique, with HfO2 substrate showing the best microstructure. The PbS films exhibited p-type conductivity with electrical resistivity values between 10(2)-10(5) Omega cm. The PbS-based TFTs showed p-type behavior with a mobility in the range of 0.006-0.011 cm(2)/Vcm and operated in depletion mode with a low positive threshold voltage.
CERAMICS INTERNATIONAL
(2021)
Article
Nanoscience & Nanotechnology
Ning Guo, Juan Li, Shang Yang, Jianjun Zhang, Jian Ni, Hongkun Cai
Summary: The study investigated the effects of dimensional structure on lead iodide perovskite properties, showing that regulating the microstructure significantly improves the electrical performance and stability of thin film transistors. Specifically, quasi-2D perovskites exhibit good performance and stability, even under high humidity conditions.
Article
Engineering, Environmental
Do-Kyung Kim, Kyeong-Ho Seo, Dae-Hyeon Kwon, Sang-Hwa Jeon, Yu-Jin Hwang, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Xue Zhang, Jin-Hyuk Bae
Summary: A sustainable water etchant-based photopatterning method is proposed to achieve simultaneous oxide film patterning and minimize trap states. This method can fabricate high-performance aluminum oxide capacitors and bias-stable indium oxide thin-film transistors.
CHEMICAL ENGINEERING JOURNAL
(2022)
Article
Chemistry, Physical
Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Rosemary R. Cranston, Mario C. Vebber, Jonatas Faleiro Berbigier, Nicole A. Rice, Claire Tonnele, Zachary J. Comeau, Nicholas T. Boileau, Jaclyn L. Brusso, Adam J. Shuhendler, Frederic Castet, Luca Muccioli, Timothy L. Kelly, Benoit H. Lessard
Summary: This study investigated eight axially substituted SiPcs and their application in solution-processed n-type OTFTs. It was found that the length of the alkyl chain affects device performance and thin-film morphology, and the effects of high-temperature annealing and spin coating time on film formation were explored. The study also revealed that thermal annealing and spin time significantly impact film crystallinity, morphology, and device performance, with bis(tri-n-butylsilyl oxide) SiPc showing the highest electron field-effect mobility among the studied materials.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Ping Ren, Runqiao Song, Yong Zhu, Brendan O'Connor, Jingyan Dong
Summary: The demand for cost-effective fabrication of printed flexible transistors has increased due to the need for flexible interface devices like e-skins, wearables, and medical patches. This study develops electrohydrodynamic printing processes to fabricate all components of polymer-based organic thin film transistors, streamlining the fabrication procedure. The fully EHD-printed OTFTs show good electrical performance and great mechanical flexibility, providing a cost-effective route for flexible electronics.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Materials Science, Multidisciplinary
Ji-Man Yu, Chungryeol Lee, Joon-Kyu Han, Seong-Joo Han, Geon-Beom Lee, Sung Gap Im, Yang-Kyu Choi
Summary: This study successfully applied solid-state polyethylene glycol di-methacrylate (pEGDMA) prepared with initiated chemical vapor deposition (iCVD) to top-gate structured EGTs, achieving a high on/off ratio. By combining with load resistors, the EGTs were also used in various multi-functional logic circuits such as inverters, NAND, and NOR gates, providing stable operation at high frequency and high voltage gain under 1V power supply.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Multidisciplinary Sciences
Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim
Summary: This paper mainly investigates the characteristics and physics model of amorphous oxide semiconductor field-effect transistors and proposes a device model for submicron oxide semiconductor transistors based on two-step oxygen annealing, which is experimentally verified to suppress short-channel effects. The research results show that short-channel effects can be effectively improved by controlling oxygen partial pressure and creating locally high oxygen concentration region.
SCIENTIFIC REPORTS
(2022)
Article
Multidisciplinary Sciences
Kelly Liang, Xin Xu, Yuchen Zhou, Xiao Wang, Calla M. McCulley, Liang Wang, Jaydeep Kulkarni, Ananth Dodabalapur
Summary: A redesign of the TFT device structure is necessary to achieve higher levels of speed and performance. Nanospike-shaped electrodes can assist charge injection and form charge nanoribbons, resulting in improved TFT characteristics. This design paradigm shows promise for boosting TFT performance in flexible/printed electronics applications.
Article
Chemistry, Analytical
Chuljin Hwang, Taehyun Kwak, Chang-Hyun Kim, Joo Hee Kim, Sungjun Park
Summary: This study demonstrates that rapid-detection iodide ion sensors based on IGZO-EGTFTs have high electrical characteristics, providing high selectivity and linear response over a wide range of iodide ion concentrations.
SENSORS AND ACTUATORS B-CHEMICAL
(2022)
Article
Chemistry, Physical
Xinjie Wang, Yi-Chi Wang, Biaolin Peng, Jianyu Deng, Ya Yang, Wenhong Sun, Zhonglin Wang
Summary: This paper investigates the influence of thickness on the performance of ferroelectric thin films and reveals that thicker films enhance spontaneous polarization but decrease dielectric permittivity, coercivity field, residual polarization, efficiency, and energy density, and gradually transition the positive electrocaloric effect into a negative regime. These changes can be attributed to the variation of in-plane tensile stresses with thickness, resulting in an increase in the tetragonal phase and a decrease in the rhombohedral phase structure.
Article
Physics, Applied
Dae-Young Jeon, So Jeong Park, Sebastian Pregl, Thomas Mikolajick, Walter M. Weber
Summary: In this study, reconfigurable Schottky-barrier thin-film transistors made of bottom-up grown single-crystalline Si-NWs were fabricated and their device length dependent electrical performance and transport mechanism were investigated. The effective extension length was found to significantly limit the overall conduction behavior of the transistors. This research offers important insights for understanding the physical operation of reconfigurable transistors with SB contacts and optimizing their performance for practical applications.
JOURNAL OF APPLIED PHYSICS
(2021)