Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties

标题
Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties
作者
关键词
-
出版物
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 2, Pages H214
出版商
The Electrochemical Society
发表日期
2010-01-01
DOI
10.1149/1.3269973

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